ICP etching equipment RIE-800iPC/RIE-400iPC
Introducing a full-scale production device equipped with a vacuum cassette chamber, offering excellent process reproducibility and stability.
The "RIE-800iPC/RIE-400iPC" is an ICP etching device that boasts stability for continuous processing of 25 SiC trench-shaped wafers. It can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity. Additionally, by adopting an exhaust system directly connected to the reaction chamber, it realizes a wide process window from low flow and low pressure to high flow and high pressure. 【Features】 <RIE-800iPC> ■ Supports maximum Φ8” wafers ■ Uses inductively coupled plasma for discharge ■ Equipped with a vacuum cassette chamber, excelling in process reproducibility and stability ■ Optimizes the distance between the wafer and plasma to ensure good in-plane uniformity ■ Integrates TMP (Turbo Molecular Pump) and high-frequency power supply for easy replacement *For more details, please refer to the PDF document or feel free to contact us.
- Company：サムコ
- Price：Other
